STD96N3LLH6 STMicroelectronics, STD96N3LLH6 Datasheet - Page 4

• Manufacturer Part Number: STD96N3LLH6
• Description: MOSFET N-CH 30V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STD96N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 70W
• Mounting Type: *
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11214-2

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
Q
Q
I
C
GS(th)
DS(on)
C
C
Q
Q
DSS
GSS
R
Q
oss
gs1
gs2
iss
rss
gs
gd
G
g
= 25 °C unless otherwise specified)
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre V
charge
Post V
charge
Gate input resistance
Static
Dynamic
DS
= 0)
th
th
gate-to-source
Parameter
Parameter
gate-to-source
GS
= 0)
Doc ID 18432 Rev 1
V
V
V
V
Figure 13
V
Figure 18
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
I
V
V
V
V
V
V
D
DS
GS
DD
GS
DD
GS
GS
GS
DS
DS
DS
= 250 µA, V
= 25 V, f=1 MHz,
= 0
= 4.5 V
= 15 V, I
= 15 V, I
Test conditions
Test conditions
= 30 V
= 30 V, Tc = 125 °C
= ± 20 V
= V
= 10 V, I
= 5.5 V, I
GS
, I
D
D
D
D
D
= 250 µA
GS
= 80 A
= 80 A
= 40 A
= 40 A
= 0
Min.
Min
30
1
-
-
-
-
0.0037 0.0042
0.0055
2200
Typ.
Typ.
400
280
8.2
7.5
3.4
6.2
20
1
STD96N3LLH6
0.007
Max.
Max.
±
2.5
100
10
1
-
-
-
-
Unit
Unit
nC
nC
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
V
V
Ω
Ω