STM32F217ZGT6 STMicroelectronics, STM32F217ZGT6 Datasheet - Page 89

• Manufacturer Part Number: STM32F217ZGT6
• Description: MCU ARM 1024KB FLASH 144LQFP
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32F217ZGT6

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CAN, Ethernet, I²C, IrDA, LIN, MMC, SPI, UART/USART, USB OTG
• Peripherals: Brown-out Detect/Reset, DMA, I²S, LCD, POR, PWM, WDT
• Number Of I /o: 114
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 132K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 24x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Cpu Family: STM32
• Device Core: ARM Cortex-M3
• Device Core Size: 32b
• Frequency (max): 120MHz
• Total Internal Ram Size: 132KB
• # I/os (max): 114
• Number Of Timers - General Purpose: 14
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Dac: 2(2-chx12-bit)
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 144
• Package Type: LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11189

STM32F215xx, STM32F217xx
5.3.16
Table 41.
1. If V
2. TT = 3.6 V tolerant.
3. FT = 5 V tolerant.
4. With a minimum of 100 mV.
5. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
6. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins.
7. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
8. Guaranteed by design, not tested in production.
Symbol
C
V
V
V
R
R
V
V
I
MOS/NMOS contribution
IH
IH
IO
lkg
hys
PU
PD
IL
IL
(1)
(1)
(8)
IH
maximum value cannot be respected, the injection current must be limited externally to I
Input low level voltage
TT
FT
Input low level voltage
TT I/O input high level voltage
FT I/O input high level voltage
I/O Schmitt trigger voltage hysteresis
IO FT Schmitt trigger voltage
hysteresis
I/O input leakage current
I/O FT input leakage current
Weak pull-up equivalent
resistor
Weak pull-down
equivalent resistor
I/O pin capacitance
(2)
(3)
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in
performed under the conditions summarized in
compliant.
I/O static characteristics
I/O input high level voltage
I/O input high level voltage
(7)
(5)
Parameter
to the series resistance is minimum
(6)
All pins
except for
PA10 and
PB12
PA10 and
PB12
All pins
except for
PA10 and
PB12
PA10 and
PB12
(6)
(5)
Doc ID 17050 Rev 4
2.7 V
1.8 V
2.0 V
(~10% order)
V
CMOS ports
CMOS ports
SS
Conditions
TTL ports
V
V
V
≤
≤
≤
≤
IN
IN
IN
V
V
V
V
=
=
DD
DD
DD
=
IN
V
V
5 V
≤
SS
DD
≤
≤
≤
.
V
Table
3.6 V
3.6 V
3.6 V
DD
Table 41
10. All I/Os are CMOS and TTL
5% V
V
V
0.7V
SS
SS
Min
2.0
2.0
30
30
8
8
-
-
-
–0.3
–0.3
DD
DD
are derived from tests
(4)
Electrical characteristics
INJ(PIN)
Typ
200
40
11
40
11
5
-
-
-
-
-
-
-
-
-
-
maximum value.
V
0.3V
DD
3.6
5.2
5.5
Max
0.8
5.5
±1
50
15
50
15
3
-
-
+0.3
(4)
(4)
(4)
DD
89/158
Unit
mV
µA
kΩ
pF
V