FS6370-01G-XTD ON Semiconductor, FS6370-01G-XTD Datasheet - Page 17

• Manufacturer Part Number: FS6370-01G-XTD
• Description: IC CLOCK GEN 3-PLL EEPROM 16SOIC
• Manufacturer: ON Semiconductor
• Type: PLL Clock Generatorr

Specifications of FS6370-01G-XTD

• Pll: Yes
• Input: Crystal
• Output: CMOS
• Number Of Circuits: 1
• Ratio - Input:output: 1:4
• Differential - Input:output: No/No
• Frequency - Max: 230MHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 3 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Frequency-max: 230MHz
• Mounting Style: SMD/SMT
• Max Input Freq: 230 MHz
• Max Output Freq: 27 MHz
• Number Of Outputs: 1
• Operating Supply Voltage: 5 V to 3.3 V
• Operating Temperature Range: 0 C to + 70 C
• Supply Current: 43 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 766-1025

FS6370
10.0 Electrical Specifications
Table 10: Absolute Maximum Ratings
Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These conditions represent a stress rating only, and functional operation of the
device at these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for extended conditions may affect
device performance, functionality and reliability.
Table 11: Operating Conditions
Parameter
Supply Voltage, dc (V
Input Voltage, dc
Output Voltage, dc
Input Clamp Current, dc (V
Output Clamp Current, dc (V
Storage Temperature Range (non-condensing)
Ambient Temperature Range, Under Bias
Junction Temperature
Re-Flow Solder Profile
Input Static Discharge Voltage Protection (MIL-STD 883E, Method 3015.7)
Parameter
Supply Voltage
Ambient Operating Temperature Range
Crystal Resonator Frequency
Crystal Resonator Load Capacitance
Serial Data Transfer Rate
Output Driver Load Capacitance
CAUTION: ELECTROSTATIC SENSITIVE DEVICE
Permanent damage resulting in a loss of functionality or performance may occur if this device is subjected to a high-energy
electrostatic discharge.
SS
= ground)
I
< 0 or V
I
< 0 or V
I
> V
I
> V
DD
DD
)
)
Symbol
V
C
f
T
C
XIN
DD
XL
A
L
Rev. 3 | Page 17 of 28 | www.onsemi.com
Conditions/Descriptions
5 V ± 10%
3.3 V ± 10%
Parallel resonant, AT cut
Standard mode
Symbol
V
V
I
T
T
I
T
V
OK
IK
DD
O
S
A
J
I
V
V
V
Min.
SS
SS
SS
-50
-50
-65
-55
-0.5
-0.5
-0.5
Min.
4.5
10
3
0
5
Typ.
V
V
3.3
18
5
Max.
DD
DD
150
125
150
260
50
50
7
2
+0.5
+0.5
Max.
100
5.5
3.6
70
27
15
Units
mA
mA
°C
°C
°C
°C
kV
V
V
V
Units
MHz
kb/s
pF
pF
°C
V