MT46H16M32LFCM-75 Micron Technology Inc, MT46H16M32LFCM-75 Datasheet - Page 61

• Manufacturer Part Number: MT46H16M32LFCM-75
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M32LFCM-75

• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 23: READ Burst
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Bank a, Col n
Bank a, Col n
READ
READ
T0
T0
Notes:
command to the same bank cannot be issued until
time is hidden during the access of the last data elements.
1. D
2. BL = 4.
3. Shown with nominal
CL = 2
NOP
NOP
T1
T1
OUT
n = data-out from column n.
CL = 3
T1n
D
OUT
NOP
NOP
T2
T2
t
AC,
D
61
t
T2n
T2n
DQSCK, and
OUT
512Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
NOP
NOP
D
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
OUT
t
DQSQ.
D
T3n
T3n
OUT
D
OUT
t
RP is met. Part of the row precharge
NOP
NOP
D
Don’t Care
T4
T4
OUT
© 2004 Micron Technology, Inc. All rights reserved.
D
OUT
READ Operation
Transitioning Data
NOP
NOP
T5
T5