MT9HTF6472FY-667D5E4 Micron Technology Inc, MT9HTF6472FY-667D5E4 Datasheet - Page 10

• Manufacturer Part Number: MT9HTF6472FY-667D5E4
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472FY-667D5E4

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Package Type: FBDIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 95C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Table 15: I
Table 16: I
Serial Presence-Detect
Table 17: Serial Presence-Detect EEPROM DC Operating Conditions
Table 18: Serial Presence-Detect EEPROM AC Operating Conditions
PDF: 09005aef81a2f1eb
htf9c64_128x72fy.pdf - Rev. C 12/09 EN
I
I
Total power
I
I
Total power
Parameter/Condition
EEPROM and AMB supply voltage
Input high voltage: Logic 1; all inputs
Input low voltage: Logic 0; all inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current
Power supply current, READ: SCL clock frequency = 100 kHz
Power supply current, WRITE: SCL clock frequency = 100 kHz
Parameter/Condition
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
CC
DD
CC
DD
Symbol
Symbol
DD
DD
Specifications – 1GB DDR2-667
Specifications – 1GB DDR2-800
I
I
DD_IDLE_0
DD_IDLE_0
OUT
2600
1060
TBD
TBD
TBD
Note:
6.1
IN
= 3mA
OUT
= GND to V
= GND to V
1. Total power is based on maximum voltage levels, I
I
I
DD_IDLE_1
DD_IDLE_1
3400
1060
TBD
TBD
TBD
7.4
DD
DD
512MB, 1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
I
I
DD_ACTIVE_1
DD_ACTIVE_1
3900
2155
10.2
TBD
TBD
TBD
10
I
I
DD_ACTIVE_2
DD_ACTIVE_2
Symbol
3700
1060
Symbol
t
t
TBD
TBD
TBD
HD:DAT
V
HD:STA
7.8
t
t
I
HIGH
t
DDSPD
LOW
V
I
t
t
V
CCW
BUF
V
I
I
CCR
AA
DH
I
LO
t
SB
LI
t
OL
IH
F
IL
I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I
I
DD_TRAINING
DD_TRAINING
V
Min
DDSPD
200
4000
1060
0.2
1.3
0.6
0.6
1.3
TBD
TBD
TBD
8.3
0
–
–
Min
–0.6
0.10
0.05
1.6
0.4
CC
3
–
2
× 0.7
at 1.575V and I
Serial Presence-Detect
Max
300
0.9
50
–
–
–
–
–
–
I
I
© 2005 Micron Technology, Inc. All rights reserved.
DD_IBIST
DD_IBIST
4500
1060
TBD
TBD
TBD
9.1
V
V
DDSPD
DDSPD
Max
3.6
0.4
DD
3
3
4
1
3
Units
+ 0.5
× 0.3
µs
µs
ns
ns
µs
µs
µs
ns
µs
at 1.9V.
I
I
2500
DD_EI
DD_EI
TBD
TBD
TBD
263
4.4
Notes
Units
mA
mA
µA
µA
µA
Units
Units
V
V
V
V
1
2
mA
mA
mA
mA
W
W