MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 34

• Manufacturer Part Number: MT48H4M16LFB4-75
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-75

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 29:
Figure 30:
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
WRITE with Auto Precharge Interrupted by a READ
WRITE with Auto Precharge Interrupted by a WRITE
Note:
Note:
Internal
States
Internal
States
DQM is LOW.
DQM is LOW.
COMMAND
COMMAND
ADDRESS
ADDRESS
BANK m
BANK m
BANK n
BANK n
CLK
DQ
CLK
DQ
Page Active
T0
NOP
Page Active
T0
NOP
WRITE - AP
BANK n,
Page Active
BANK n
COL a
WRITE - AP
T1
D
BANK n,
a
Page Active
IN
BANK n
COL a
T1
D
WRITE with Burst of 4
a
IN
WRITE with Burst of 4
34
a + 1
T2
D
NOP
IN
T2
a + 1
D
NOP
IN
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BANK m,
READ - AP
T3
COL d
BANK m
Interrupt Burst, Write-Back
a + 2
t
T3
CAS Latency = 3 (BANK m)
D
WR - BANK n
READ with Burst of 4
NOP
IN
64Mb: 4 Meg x 16 Mobile SDRAM
T4
NOP
BANK m,
WRITE - AP
COL d
BANK m
T4
D
d
t
IN
Interrupt Burst, Write-Back
WR - BANK n
WRITE with Burst of 4
T5
NOP
Precharge
t
RP - BANK n
T5
d + 1
NOP
D
IN
T6
D
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NOP
OUT
d
DON’T CARE
T6
d + 2
NOP
D
t RP - BANK n
IN
Precharge
DON’T CARE
T7
D
d + 1
NOP
t RP - BANK m
OUT
T7
d + 3
NOP
D
t WR - BANK m
IN
Write-Back