MT48H4M16LFB4-75 Micron Technology Inc, MT48H4M16LFB4-75 Datasheet - Page 6

• Manufacturer Part Number: MT48H4M16LFB4-75
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-75

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 3:
PDF: 09005aef8237ed98, Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. B 10/06 EN
BA0, BA1
A0-A11,
CAS#
RAS#
WE#
CKE
CLK
CS#
14
Functional Block Diagram – 4 Meg x 16
REGISTER
ADDRESS
MODE REGISTER
CONTROL
LOGIC
12
The 64Mb SDRAM is designed to operate in 1.8V, low-power memory systems. An auto
refresh mode is provided, along with a power-saving, deep power-down mode. All inputs
and outputs are LVTTL-compatible.
SDRAMs offer substantial advances in DRAM operating performance, including the
ability to synchronously burst data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks in order to hide precharge
time, and the capability to randomly change column addresses on each clock cycle
during a burst access.
COUNTER
REFRESH
12
8
2
12
ADDRESS
2
ROW-
MUX
COLUMN-
COUNTER/
CONTROL
ADDRESS
LATCH
BANK
LOGIC
12
DECODER
ADDRESS
BANK0
LATCH
ROW-
&
8
6
4096
READ DATA LATCH
DQM MASK LOGIC
SENSE AMPLIFIERS
(4,096 x 256 x 16)
WRITE DRIVERS
I/O GATING
DECODER
MEMORY
COLUMN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BANK0
ARRAY
4096
(x16)
256
BANK1
64Mb: 4 Meg x 16 Mobile SDRAM
BANK2
BANK3
BA1
0
0
1
1
16
16
2
BA0
0
1
0
1
REGISTER
REGISTER
OUTPUT
©2006 Micron Technology, Inc. All rights reserved.
INPUT
DATA
DATA
Bank
0
1
2
3
2
16
DQML,
DQMH
DQ0-
DQ15