TLP251 Toshiba, TLP251 Datasheet
TLP251
Specifications of TLP251
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TLP251 Summary of contents
Page 1
... Power MOS FET Gate Drive IGBT Gate Drive The TOSHIBA TLP251 consists of a integrated photodetector. This unit is 8-lead DIP package. TLP251 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A) Input threshold current: I =5mA(max.) ...
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... O − 0.73 ΔV / Δ 125 j (Note −20~85 T opr −55~125 T stg T 260 sol BV 2500 S (Note 4) ≤ −0.25A(≤ 2.0μs), I ≤ +0.25A(≤2.0μs) OPL 2 TLP251 Unit ° ° ° °C °C kHz °C °C °C Vrms 2007-10-01 ...
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... EE1 ― −14.5 −12.5 = 0.8V ― ― 7.5 ― ― ― ― 8 ― ― = −15V EE1 ― 1.2 > −15V EE1 0.8 ― ― < 0V ― ― 1.0 2 1×10 ― 10 2007-10-01 TLP251 Unit V ― °C μA pF ― Ω ...
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... Ta = 25℃ 600V 30V 25℃ CC Test Circuit OPL 8 OPH Test Circuit CC1 EE1 4 TLP251 Min. Typ.* Max. ― 0.25 1.0 ― 0.25 1.0 = −15V EE1 ― ― ― ― ― ― = 8mA, −5000 ― ― = 0mA, 5000 ― ― 0.1μ OPL ...
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... SW: A(I = 8mA SW: B the maximum rate of rise (fall) of the common mode voltage that can sustained with the output voltage in the low (high) state CC1 EE1 0.1μ 600V C MH 26V GND 480( μs 480( μs 2007-10-01 TLP251 80% OH 80% OL ...
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... Ta OPH, OPL 0.5 PW ≤ 2.0 μs, f ≤15 KHz 0.4 0.3 0.2 0 Ambient temperature Ta (°C) －2.6 －2.4 －2.2 －2.0 －1.8 －1.6 －1.4 2.0 0.1 0.3 0.5 Forward current 100 0 Ambient temperature Ta (°C) 100 80 6 TLP251 ΔV /ΔV – (mA – 100 2007-10-01 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TLP251 2007-10-01 ...