GT15J321 Toshiba, GT15J321 Datasheet

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GT15J321

Manufacturer Part Number
GT15J321
Description
Manufacturer
Toshiba
Datasheet

Specifications of GT15J321

Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
15A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Not Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GT15J321
Manufacturer:
TOS
Quantity:
5 500
Part Number:
GT15J321
Manufacturer:
VISHAY
Quantity:
50 000
Part Number:
GT15J321(Q)
Manufacturer:
Toshiba
Quantity:
135
High Power Switching Applications
Fast Switching Applications
Absolute Maximum Ratings
Equivalent Circuit
Fourth-generation IGBT
Fast switching (FS
Enhancement mode type
High speed: t
Low saturation Voltage: V
FRD included between emitter and collector
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Gate
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
f
= 0.03 μs (typ.)
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Collector
Emitter
1 ms
1 ms
CE (sat)
DC
DC
= 1.90 V (typ.)
(Ta = 25°C)
Symbol
V
V
T
GT15J321
I
I
P
GES
CES
I
CP
FM
I
T
stg
C
F
C
j
−55~150
Rating
600
±20
150
15
30
15
30
30
1
Marking
15J321
Unit
°C
°C
W
V
V
A
A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Weight: 1.7 g
JEDEC
JEITA
TOSHIBA
2-10R1C
GT15J321
2006-10-31
Unit: mm

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GT15J321 Summary of contents

Page 1

... Symbol Rating Unit V 600 V CES ± GES 150 °C j −55~150 T °C stg Marking 15J321 1 GT15J321 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10R1C Weight: 1.7 g Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2006-10-31 ...

Page 2

... A, di/dt = −100 A/μ ⎯ (j-c) ⎯ ( (off) 10 GT15J321 Min Typ. ⎯ ⎯ ±500 ⎯ ⎯ ⎯ 3.5 ⎯ 1.90 ⎯ 2300 ⎯ 0.04 ⎯ 0.17 ⎯ 0.03 (Note 1) ⎯ 0.34 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10% ...

Page 3

... Common emitter Tc = 25° Gate-emitter voltage V ( – Common emitter 125°C 5 − Gate-emitter voltage V ( Gate-emitter voltage Gate-emitter voltage V 4 Common emitter −60 −20 20 Case temperature Tc (°C) 3 GT15J321 V – Common emitter Tc = −40° ( – Common emitter Tc = 125° ( – (sat 100 140 2006-10-31 ...

Page 4

... 300 0. Ω 25° 125°C 0.01 0 1000 Switching loss Common emitter 300 Ω 25° 125°C (Note 2) 0.5 0.3 0.1 E off 0.05 0.03 0.01 0 300 1000 4 GT15J321 Switching time – Collector current I (A) C Switching time – I off Collector current I ( – off ...

Page 5

... Common collector di/dt = −100 A/μ 2 μ 0 < = 125°C 0 Ω 0.1 300 1000 1 3 (V) Collector-emitter voltage V 5 GT15J321 – 300 8 200 100 100 120 Gate charge Q (nC) G − 1000 : Tc = 25°C 300 : Tc = 125°C 100 ...

Page 6

... Tc = 25° FRD 0 10 IGBT − − − − − 5 − 4 − 3 − 2 − Pulse width t ( GT15J321 2006-10-31 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 GT15J321 20070701-EN 2006-10-31 ...

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