BCV26E6327XT Infineon Technologies, BCV26E6327XT Datasheet

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PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type BCV26 BCV46 Maximum Ratings Parameter Collector-emitter voltage BCV26 BCV46 Collector-base voltage BCV26 ...

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Thermal Resistance Parameter 1) Junction - soldering point 1 For calculation of R thJA please refer to Application Note Thermal Resistance BCV26, BCV46 Symbol Value R 210 thJS 2 Unit K/W 2007-04-20 ...

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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BCV26 mA BCV46 C B Collector-base breakdown voltage I = 100 µA, I ...

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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB = 25°C, unless otherwise specified A ...

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DC current gain BCV 26/ 125 ˚ ˚C 5 -55 ˚ Base-emitter ...

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Transition frequency BCV 26/ MHz Total power dissipation P 400 mW 300 250 200 150 100 ...

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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...