TLP351(TP5,F) Toshiba, TLP351(TP5,F) Datasheet

TLP351(TP5,F)

Manufacturer Part Number
TLP351(TP5,F)
Description
Manufacturer
Toshiba
Datasheet

Specifications of TLP351(TP5,F)

Number Of Elements
1
Input Type
DC
Output Type
Push-Pull
Forward Voltage
1.7V
Forward Current
20mA
Isolation Voltage
3750Vrms
Package Type
PDIP
Operating Temp Range
-40C to 100C
Propagation Delay Time
700ns
Pin Count
8
Mounting
Through Hole
Reverse Breakdown Voltage
5V
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
Inverter for Air Conditioner
IGBT/Power MOS FET Gate Drive
Industrial Inverter
The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power
IGBTs.
Truth Table
Peak output current: ±0.6 A (max)
Guaranteed performance over temperature: −40 to 100°C
Supply current: 2 mA (max)
Power supply voltage: 10 to 30 V
Threshold input current : I
Switching time (t
Common mode transient immunity: 10 kV/μs
Isolation voltage: 3750 Vrms
Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890V
Highest Permissible Over Voltage
(Note):When a EN60747-5-2 approved type is needed,
Input
H
L
Please designate “Option(D4)”
LED
OFF
ON
pLH
/t
pHL
OFF
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
Tr1
ON
) : 700 ns (max)
F
= 5 mA (max)
OFF
Tr2
ON
: 4000V
TLP351
Output
H
L
PK
PK
1
Pin Configuration (top view)
Schematic
V
1
2
3
4
2+
3−
F
A 0.1 μF bypass capacitor must be connected
between pin 8 and 5.
I
F
Weight: 0.54 g (typ.)
TOSHIBA
(Tr1)
(Tr2)
I
I
CC
O
8
7
6
5
8
6
5
11-10C4
V
V
GND
CC
O
2010-06-17
TLP351
1: NC
2: Anode
3: Cathode
4: NC
5: GND
6: V
7: NC
8: V
Unit: mm
O
CC
(output)

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TLP351(TP5,F) Summary of contents

Page 1

... TOSHIBA Photocoupler GaAℓAs IRED + Photo IC Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 3

Electrical Characteristics Characteristics Forward voltage Temperature coefficient of forward voltage Input reverse current Input capacitance “H” Level Output current (Note 8) “L” Level “H” Level Output voltage “L” Level “H” Level Supply current “L” Level L → H Threshold input ...

Page 4

Switching Characteristics Characteristics L → H Propagation delay time H → L Propagation delay difference between any two parts or channels Output rise time (10-90%) Output fall time (90-10%) Common mode transient immunity at high level output Common mode transient ...

Page 5

Test Circuit pLH pHL Test Circuit − ...

Page 6

I F ─ 100 ° 0.5 0.3 0.1 0.05 0.03 0.01 1.4 1.0 1.2 1 ...

Page 7

=30V -40 - Ambient Temperature Ta(°C) I – Ta OPL =0mA,V CC =15V (Note:9) 0.8 0.6 0.4 0.2 0 -40 ...

Page 8

500 I F =5mA,V CC =30V Rg=47Ω,Cg=3nF 400 tpLH 300 200 tpHL 100 0 -40 - Ambient Temperature Ta (°C) 80 100 8 TLP351 2010-06-17 ...

Page 9

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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