MT29F1G08ABADAWP:D Micron Technology Inc, MT29F1G08ABADAWP:D Datasheet - Page 81
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MT29F1G08ABADAWP:D
Manufacturer Part Number
MT29F1G08ABADAWP:D
Description
MICMT29F1G08ABADAWP:D 1GB SLC NAND 34NM
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAWPD.pdf
(93 pages)
Specifications of MT29F1G08ABADAWP:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABADAWP:D
Manufacturer:
MICRON
Quantity:
3 400
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Part Number:
MT29F1G08ABADAWP:D
Manufacturer:
MICRON
Quantity:
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Company:
Part Number:
MT29F1G08ABADAWP:D
Manufacturer:
MICRON
Quantity:
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Part Number:
MT29F1G08ABADAWP:D
Manufacturer:
MICRON
Quantity:
20 000
Table 26: DC Characteristics and Operating Conditions (1.8V)
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Parameter
Sequential READ current
PROGRAM current
ERASE current
Standby current (TTL)
Standby current (CMOS)
Staggered power-up cur-
rent
Input leakage current
Output leakage current
Input high voltage
Input low voltage, all in-
puts
Output high voltage
Output low voltage
Output low current (R/B#)
Notes:
t
RC =
CE#, CLE, ALE, WE#, RE#,
Line capacitance = 0.1µF
1. Typical and maximum values are for single-plane operation only. If device supports dual-
2. Values are for single-die operations. Values could be higher for interleaved-die operations.
3. Measurement is taken with 1ms averaging intervals and begins after V
4. Test conditions for V
5. DC characteristics may need to be relaxed if R/B# pull-down strength is not set to full.
I/O[7:0], I/O[15:0],
CE# = V
V
Rise time = 1ms
V
t
WP# = 0V/V
WP# = 0V/V
OUT
plane operation, values are 20mA (TYP) and 40mA (MAX).
RC (MIN); CE# = V
I
I
Conditions
IN
OH
OL
I
Electrical Specifications – DC Characteristics and Operating
V
OUT
CE# = V
= 0V to V
OL
= +100µA
= 0V to V
= –100µA
WP#
= 0.2V
= 0mA
–
–
CC
–
- 0.2V;
IH
;
CC
CC
CC
CC
IL
;
OH
I
Symbol
OL
and V
V
I
I
I
V
I
I
V
I
V
(R/B#)
CC1
CC2
CC3
I
SB1
SB2
I
LO
ST
OH
LI
OL
81
IH
IL
OL
.
0.8 x V
V
CC
Min
–0.3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
–
–
–
–
–
–
–
–
3
- 0.1
1Gb x8, x16: NAND Flash Memory
CC
Typ
13
10
10
10
4
–
–
–
–
–
–
–
–
10 per die
V
0.2 x V
CC
Max
±10
±10
0.1
20
20
20
50
1
+ 0.3
–
–
© 2010 Micron Technology, Inc. All rights reserved.
CC
CC
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
reaches V
Conditions
Notes
CC
1, 2
1, 2
1, 2
3
4
4
5
(MIN).