MT41J64M16JT-125:G Micron Technology Inc, MT41J64M16JT-125:G Datasheet - Page 163
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MT41J64M16JT-125:G
Manufacturer Part Number
MT41J64M16JT-125:G
Description
MICMT41J64M16JT-125:G 64X16 1GB DDR3
Manufacturer
Micron Technology Inc
Series
-r
Type
DDR3 SDRAMr
Specifications of MT41J64M16JT-125:G
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
800MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-TFBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT41J64M16JT-125:G
Manufacturer:
TRXCOM
Quantity:
30 000
Company:
Part Number:
MT41J64M16JT-125:G
Manufacturer:
MICRON
Quantity:
6 550
Company:
Part Number:
MT41J64M16JT-125:G
Manufacturer:
MICRON33
Quantity:
1 935
Company:
Part Number:
MT41J64M16JT-125:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT41J64M16JT-125:G
Manufacturer:
MICRON/美光
Quantity:
20 000
Table 78:
Table 79:
Table 80:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_5.fm - Rev. F 11/08 EN
Figure and Page
Figure 111 on page 164
Figure 112 on page 164
Figure 113 on page 165
Figure 114 on page 166
Figure 115 on page 166
M9
0
0
0
0
1
1
1
1
M10
n/a
n/a
n/a
n/a
0
0
1
1
MR2 (R
MR1 (R
Mode Registers for R
Mode Registers for R
Timing Diagrams for Dynamic ODT
TT
M6
Notes:
0
0
1
1
0
0
1
1
TT
_
WR
_
NOM
)
M9
n/a
n/a
n/a
n/a
0
1
0
1
)
1. RZQ = 240Ω. If R
M2
0
1
0
1
0
1
0
1
Title
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
Dynamic ODT: Without WRITE Command
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles,
BL8
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
TT
TT
_
_
NOM
WR
TT
R
Reserved
Reserved
_
RZQ/12
TT
(RZQ)
RZQ/4
RZQ/2
RZQ/6
RZQ/8
NOM
Off
_
NOM
Reserved
R
Dynamic ODT off: WRITE does not affect R
is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed
(RZQ)
RZQ/4
RZQ/2
TT
n/a
n/a
n/a
n/a
_
WR
163
Micron Technology, Inc., reserves the right to change products or specifications without notice.
R
Reserved
Reserved
(Ohms)
TT
120
Off
60
40
20
30
_
NOM
1Gb: x4, x8, x16 DDR3 SDRAM
On-Die Termination (ODT)
©2006 Micron Technology, Inc. All rights reserved.
Mode Restriction
Self refresh, write
Reserved
(Ohms)
TT
R
TT
Self refresh
_
120
n/a
n/a
n/a
n/a
60
NOM
R
_
TT
WR
n/a
n/a
n/a
_
NOM
.