PMV22EN NXP Semiconductors, PMV22EN Datasheet - Page 6
PMV22EN
Manufacturer Part Number
PMV22EN
Description
MOSFET, N CH, 30V, 5.2A, SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMV22EN.pdf
(14 pages)
Specifications of PMV22EN
Rohs Compliant
YES
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.017ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.5V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMV22EN
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
PMV22EN
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
DSon
(A)
I
D
16
12
80
60
40
20
8
4
0
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
2
j
j
(1)
= 25 °C
= 25 °C
3 V
GS
GS
GS
GS
GS
GS
4
= 2.5 V
= 2.6 V
= 2.8 V
= 3.0 V
= 4.5 V
= 10 V
4.5 V
(2)
10 V
1
6
8
2
(3)
(4)
(5)
(6)
10
V
GS
2.5 V
2.3 V
= 2.8 V
12
3
All information provided in this document is subject to legal disclaimers.
V
I
017aaa155
017aaa157
D
DS
14
(A)
(V)
16
4
Rev. 1 — 30 March 2011
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
10
10
10
10
D
80
60
40
20
–3
–4
–5
–6
0
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
2
D
j
= 25 °C; V
= 5.3 A
j
j
= 150 °C
= 25 °C
30 V, 5.2 A N-channel Trench MOSFET
(1)
4
DS
1.0
= 5 V
6
(2)
2.0
(1)
(2)
PMV22EN
(3)
8
V
© NXP B.V. 2011. All rights reserved.
GS
V
017aaa156
017aaa158
GS
(V)
(V)
3.0
10
6 of 14