PMV22EN NXP Semiconductors, PMV22EN Datasheet - Page 7

• Manufacturer Part Number: PMV22EN
• Description: MOSFET, N CH, 30V, 5.2A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV22EN

• Rohs Compliant: YES
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.017ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V

NXP Semiconductors
PMV22EN
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
20
16
12
8
4
0
3
2
1
0
–60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= 0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
× R
1
0
DSon
DS
= V
60
(1)
(2)
(3)
2
(2)
GS
(1)
120
(1)
3
All information provided in this document is subject to legal disclaimers.
V
017aaa159
017aaa161
T
GS
(2)
j
(°C)
(V)
180
4
Rev. 1 — 30 March 2011
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
1.8
1.4
1.0
0.6
10
3
2
10
–60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
–1
iss
oss
rss
30 V, 5.2 A N-channel Trench MOSFET
0
GS
1
= 0 V
60
(1)
(2)
(3)
10
PMV22EN
120
V
© NXP B.V. 2011. All rights reserved.
DS
017aaa160
T
017aaa162
j
(V)
(°C)
180
10
2
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