PMV32UP NXP Semiconductors, PMV32UP Datasheet - Page 4

• Manufacturer Part Number: PMV32UP
• Description: MOSFET, P CH, 20V, 4A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV32UP

• Rohs Compliant: YES
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 0.032ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -700mV

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
PMV32UP
Product data sheet
Symbol
R
R
Fig 3.
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
–10
–10
(A)
–10
I
D
–10
–1
–1
–2
2
10
voltage
I
(1) t
(2) t
(3) t
(4) DC; T
(5) t
(6) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
–1
Thermal characteristics
Limit R
= single pulse
p
p
p
p
= 100 µs
= 1 ms
= 10 ms
= 100 ms
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
DSon
sp
amb
= 25 °C
= V
= 25 °C; drain mounting pad 6 cm
DS
/I
D
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
1
Rev. 1 — 11 March 2011
2
10
20 V, 4 A P-channel Trench MOSFET
[1]
[2]
2
.
(1)
(2)
(3)
(4)
(5)
(6)
Min
-
-
-
V
DS
(V)
Typ
207
117
25
PMV32UP
© NXP B.V. 2011. All rights reserved.
017aaa139
Max
245
135
30
10
2
Unit
K/W
K/W
K/W
4 of 15