PMV32UP NXP Semiconductors, PMV32UP Datasheet - Page 8

• Manufacturer Part Number: PMV32UP
• Description: MOSFET, P CH, 20V, 4A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV32UP

• Rohs Compliant: YES
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 0.032ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -700mV

NXP Semiconductors
PMV32UP
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
–1.2
–0.8
–0.4
D
–16
–12
–8
–4
0
0
–60
0.0
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
D
DS
= -0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
× R
–0.5
0
DSon
DS
–1.0
= V
60
(1)
(2)
(3)
(2)
GS
–1.5
(1)
120
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V
017aaa146
(1)
017aaa148
T
GS
j
(°C)
(V)
(2)
–2.0
180
Rev. 1 — 11 March 2011
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
10
2.0
1.5
1.0
0.5
0.0
10
–10
1
4
3
2
–60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
–1
iss
oss
rss
20 V, 4 A P-channel Trench MOSFET
0
GS
–1
= 0 V
(1)
(2)
(3)
60
–10
PMV32UP
120
V
© NXP B.V. 2011. All rights reserved.
DS
017aaa147
T
017aaa149
j
(V)
(°C)
–10
180
2
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