MT46V128M8P-6T IT:ATR Micron Technology Inc, MT46V128M8P-6T IT:ATR Datasheet - Page 48

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MT46V128M8P-6T IT:ATR

Manufacturer Part Number
MT46V128M8P-6T IT:ATR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V128M8P-6T IT:ATR

Organization
128Mx8
Density
1Gb
Address Bus
16b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
230mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
CAS Latency (CL)
Figure 22:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
CAS Latency
Note:
The CL is the delay, in clock cycles, between the registration of a READ command and
the availability of the first bit of output data. The latency can be set to 2, 2.5, or 3 (-5B
only) clocks, as shown in Figure 22. Reserved states should not be used, as unknown
operation or incompatibility with future versions may result.
If a READ command is registered at clock edge n, and the latency is m clocks, the data
will be available nominally coincident with clock edge n + m. Table 29 on page 49 indi-
cates the operating frequencies at which each CL setting can be used.
Command
Command
Command
BL = 4 in the cases shown; shown with nominal
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
READ
READ
READ
T0
T0
T0
CL = 2
CL = 2.5
CL = 3
NOP
NOP
NOP
T1
T1
T1
48
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
NOP
NOP
T2
T2
T2
t
T2n
T2n
AC,
1Gb: x4, x8, x16 DDR SDRAM
t
DQSCK, and
NOP
NOP
NOP
T3
T3
T3
Don’t Care
©2003 Micron Technology, Inc. All rights reserved.
T3n
T3n
T3n
t
DQSQ.
Operations

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