MT46V128M8P-6T IT:ATR Micron Technology Inc, MT46V128M8P-6T IT:ATR Datasheet - Page 75

• Manufacturer Part Number: MT46V128M8P-6T IT:ATR
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V128M8P-6T IT:ATR

• Organization: 128Mx8
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 230mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Figure 47:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Command
BA0, BA1
Address
DQ
DQS
CK#
CKE
A10
DM
CK
5
t IS
t IS
NOP
WRITE – DM Operation
T0
t IH
1
t IH
Notes:
Bank x
t IS
t IS
ACT
Row
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 48 on page 76 for detailed DQ timing.
t IH
t IH
t CK
times.
t RCD
t RAS
NOP
T2
1
t CH
t CL
Bank x
WRITE
t IS
3
Col n
T3
t DQSS (NOM)
t IH
2
t WPRES t WPRE
75
t DS
NOP
T4
DI
b
1
t DH
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T4n
t DQSL
NOP
T5
t DQSH
1
1Gb: x4, x8, x16 DDR SDRAM
T5n
t WPST
NOP
T6
1
Transitioning Data
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t WR
NOP
T7
1
Operations
All banks
One bank
Bank x
Don’t Care
PRE
T8
4
t RP