MT46V128M8P-6T IT:ATR Micron Technology Inc, MT46V128M8P-6T IT:ATR Datasheet - Page 68

• Manufacturer Part Number: MT46V128M8P-6T IT:ATR
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V128M8P-6T IT:ATR

• Organization: 128Mx8
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 230mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Figure 40:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
WRITE-to-READ – Uninterrupting
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
1. DI b = data-in for column b; DO n = data-out for column n.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4.
5. The READ and WRITE commands are to the same device. However, the READ and WRITE
6. A10 is LOW with the WRITE command (auto precharge is disabled).
DQSS
DQSS
DQSS
t
commands may be to different devices, in which case
command could be applied earlier.
WTR is referenced from the first positive CK edge after the last data-in pair.
DI
b
NOP
T1
DI
b
DI
b
T1n
NOP
T2
68
T2n
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WTR
Bank a,
READ
Col n
T4
1Gb: x4, x8, x16 DDR SDRAM
t
WTR is not required, and the READ
Transitioning Data
CL = 2
CL = 2
CL = 2
©2003 Micron Technology, Inc. All rights reserved.
T5
NOP
Operations
T6
NOP
Don’t Care
DO
DO
DO
n
n
n
T6n