HDB104G Taiwan Semiconductor, HDB104G Datasheet - Page 2
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HDB104G
Manufacturer Part Number
HDB104G
Description
Rectifiers 1.0 Amp 400 Volt 50 Amp IFSM
Manufacturer
Taiwan Semiconductor
Datasheet
1.HDB106G.pdf
(2 pages)
Specifications of HDB104G
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.3 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Package / Case
DB
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
C1
1.0
0.5
RATINGS AND CHARACTERISTIC CURVES (HDB(S)101G THRU HDB(S)107G)
0
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0.1
20
1
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.4- TYPICAL JUNCTION CAPACITANCE
60Hz RESISTIVE OR
INDUCTIVE LOAD
SURGE CURRENT
50
NONINDUCTIVE
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
CURVE
40
2
0.5
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1
AMBIENT TEMPERATURE. ( C)
NUMBER OF CYCLES AT 60Hz
60
2. Rise Time=10ns max. Sourse Impedance=
2
REVERSE VOLTAGE. (V)
5
NON
INDUCTIVE
1 megohm 22pf
50 ohms
DUT
10
NONINDUCTIVE
5
80
10
10
OSCILLOSCOPE
(NOTE 1)
20
100
8.3ms Single Half Sine Wave
JEDEC Method
20
o
50
Copper Pauls
.51" x .51"
(13mm x 13mm)
120
Tj=25 C
100 200
.06" (1.5mm)
PCB
0
PULSE
GENERATOR
(NOTE 2)
50
140 150
500
(-)
(+)
100
800
+0.5A
-0.25A
-1.0A
FIG.2- TYPICAL FORWARD CHARACTERISTICS
FIG.5- TYPICAL REVERSE CHARACTERISTICS
0.001
0.01
1000
100
0.1
0
0.1
10
10
1
1
0.2
0
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
0.4
20
trr
1cm
0
FORWARD VOLTAGE. (V)
Tj=125 C
0.6
40
SET TIME BASE FOR
5/ 10ns/ cm
0
0.8
60
1.0
80
1.2
Tj=25 C
100
Version: A06
0
1.4
120
1.6
140