BFY193C (S) Infineon Technologies, BFY193C (S) Datasheet - Page 3

• Manufacturer Part Number: BFY193C (S)
• Description: RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies

Specifications of BFY193C (S)

• Lead Free Status / Rohs Status: No
• Other names: BFY193CSNH

Electrical Characteristics (continued)
Notes.:
1.)
IFAG IMM RPD D HIR
Parameter
DC Characteristics
Base-Emitter forward voltage
I
DC current gain
I
AC Characteristics
Transition frequency
I
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise Figure
I
Z
Power gain
I
Z
Transducer gain
I
Z
Output Power
I
P
E
C
C
C
C
C
C
C
S
S
S
CB
CE
EB
IN
= 40 mA, V
= 30 mA, I
= 30 mA, V
= 40mA, V
= 50 mA, V
= 15 mA, V
= 40 mA, V
= 50 mA, V
= Z
= Z
= Z
=10dBm, Z
= 0.5V, V
= 10 V, V
= 10 V, V
G
L
ma
Sopt
Sopt
= 50 

, Z
S
S
L
C
12
21
CE
= Z
CE
CB
CE
CE
BE
BE
CE
CE
CE
S
= 0
= 5 V, f = 500 MHz
= Z
(
= 5 V, f = 2 GHz
= vbe = 0, f = 1 MHz
= vbe = 0, f = 1 MHz
= vcb = 0, f = 1 MHz
= 8 V
= 8 V, f = 500 MHz
= 5 V, f = 2 GHz,
= 5V, f = 2 GHz
= 5 V, f = 2GHz,
k
Lopt

L
= 50 
k
2

1
)
,
G
ms

S
S
12
21
Symbol
V
h
f
C
C
C
F
Gma
|S
P
T
FE
FBE
OUT
CB
CE
EB
21e
3 of 4
|
2
1.)
min.
-
50
6,5
-
-
-
-
-
12.5
8
16.5
Values
typ.
-
100
7.5
8
0.56
0.34
1.9
2.3
13.5
9
17.5
max.
1
175
-
-
0.75
-
2.4
2.9
-
-
-
V2, February 2011
BFY193
Unit
V
-
GHz
pF
pF
pF
dB
dB
dB
dBm