IRFPS40N60K Vishay, IRFPS40N60K Datasheet

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IRFPS40N60K

Manufacturer Part Number
IRFPS40N60K
Description
MOSFET Power N-Chan 600V 40 Amp
Manufacturer
Vishay
Datasheet

Specifications of IRFPS40N60K

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
40 A
Power Dissipation
570 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Super-247
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No RoHS Version Available

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPS40N60K
Manufacturer:
Vishay Siliconix
Quantity:
17 476
Part Number:
IRFPS40N60KPBF
Manufacturer:
Vishay Siliconix
Quantity:
17 490
Part Number:
IRFPS40N60KPBF
Manufacturer:
IR
Quantity:
5 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91261
S09-0059-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 38 A, dI/dt ≤ 150 A/µs, V
(Ω)
SUPER-247
J
= 25 °C, L = 0.84 mH, R
TM
a
G
D
S
c
a
a
DD
b
V
GS
≤ V
G
= 10 V
DS
= 25 Ω, I
G
, T
J
N-Channel MOSFET
Single
≤ 150 °C.
600
330
150
84
AS
= 38 A, dV/dt = 5.5 V/ns (see fig. 12a).
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.110
GS
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
Super-247
IRFPS40N60KPbF
SiHFPS40N60K-E3
IRFPS40N60K
SiHFPS40N60K
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Enhanced Body Diode dV/dt Capability
• Lead (Pb)-free Available
APPLICATIONS
• Hard Switching Primary or PFC Switch
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
IRFPS40N60K, SiHFPS40N60K
Requirement
Ruggedness
and Current
TM
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
600
160
600
570
4.5
7.5
40
24
40
57
Vishay Siliconix
d
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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