IRFPS40N60K Vishay, IRFPS40N60K Datasheet - Page 4

• Manufacturer Part Number: IRFPS40N60K
• Description: MOSFET Power N-Chan 600V 40 Amp
• Manufacturer: Vishay

Specifications of IRFPS40N60K

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 40 A
• Power Dissipation: 570 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
www.vishay.com
4
100000
10000
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
12
10
7
5
2
0
1
0
I
D
=
38A
V DS , Drain-to-Source Voltage (V)
50
Q , Total Gate Charge (nC)
G
V GS = 0V,
C
C
C
10
iss
rss
oss
V
V
V
100
DS
DS
DS
= C
= C
= C
= 480V
= 300V
= 120V
gs
ds
gd
+ C
+ C
Coss
Ciss
Crss
f = 1 MHZ
150
gd
gd
, C
100
ds
SHORTED
200
250
1000
1000
100
Fig. 7 - Typical Source-Drain Diode Forward Voltage
0.1
10
1000
100
0.1
1
10
1
0.2
1
Fig. 8 - Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
T = 150
J
V DS , Drain-toSource Voltage (V)
V
SD
°
,Source-to-Drain Voltage (V)
C
10
0.6
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T = 25 C
J
100
0.9
°
S09-0059-Rev. A, 02-Feb-09
Document Number: 91261
1msec
10msec
1000
100μsec
1.3
V
GS
= 0 V
10000
1.6