BUK7L11-34ARC NXP Semiconductors, BUK7L11-34ARC Datasheet - Page 10

• Manufacturer Part Number: BUK7L11-34ARC
• Description: MOSFET Power TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7L11-34ARC

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0097 Ohms
• Drain-source Breakdown Voltage: 34 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 89 A
• Power Dissipation: 172 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7L11-34ARC,127

NXP Semiconductors
BUK7L11-34ARC_5
Product data sheet
Fig 13. Gate-source threshold voltage as a function of
Fig 15. Source current as a function of source-drain
V
GS(th)
(V)
100
(A)
I
80
60
40
20
S
5
4
3
2
1
0
0
-60
junction temperature
voltage; typical values
0.0
min
max
typ
0.2
0
T
j
= 175 °C
0.4
60
0.6
0.8
120
T
j
= 25 °C
1.0
T
j
V
03nh86
(°C)
03nj42
SD
(V)
Rev. 05 — 17 February 2009
180
1.2
Fig 14. Normalized drain-source on-state resistance
Fig 16. Gate-source voltage as a function of gate
V
a
(V)
1.5
0.5
GS
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
N-channel TrenchPLUS standard level FET
0
V
BUK7L11-34ARC
DD
20
= 14 V
60
40
120
V
Q
© NXP B.V. 2009. All rights reserved.
DD
G
03aa27
= 27 V
(nC)
T
j
03nj43
( ° C)
180
60
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