BUK7L11-34ARC NXP Semiconductors, BUK7L11-34ARC Datasheet - Page 9

• Manufacturer Part Number: BUK7L11-34ARC
• Description: MOSFET Power TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7L11-34ARC

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0097 Ohms
• Drain-source Breakdown Voltage: 34 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 89 A
• Power Dissipation: 172 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7L11-34ARC,127

NXP Semiconductors
BUK7L11-34ARC_5
Product data sheet
Fig 9.
Fig 11. Transfer characteristics: drain current as a
R
(mΩ)
DSon
100
(A)
I
D
80
60
40
20
25
20
15
10
0
5
of drain current; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
0
0
5
6
T
100
j
2
= 175 °C
7
8
200
4
T
j
10
= 25 °C
V
300
GS
6
(V) = 20
V
I
GS
D
03nj48
(A)
03nj45
(V)
Rev. 05 — 17 February 2009
400
8
Fig 10. Forward transconductance as a function of
Fig 12. Drain-source clamping voltage as a function of
V
DSR(CL)
(V)
(S)
g
43
42
41
40
39
40
30
20
10
fs
0
drain current; typical values
gate-source clamping current; typical values
0
0
N-channel TrenchPLUS standard level FET
T
T
T
j
j
j
20
= 175 °C
= 25 °C
= -55 °C
BUK7L11-34ARC
1
40
2
-I
60
GS(CL)
© NXP B.V. 2009. All rights reserved.
I
D
03nj56
(mA)
03nj44
(A)
80
3
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