BUK7L11-34ARC NXP Semiconductors, BUK7L11-34ARC Datasheet - Page 8

• Manufacturer Part Number: BUK7L11-34ARC
• Description: MOSFET Power TRENCHPLUS MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7L11-34ARC

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0097 Ohms
• Drain-source Breakdown Voltage: 34 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 89 A
• Power Dissipation: 172 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7L11-34ARC,127

NXP Semiconductors
BUK7L11-34ARC_5
Product data sheet
Fig 5.
Fig 7.
(A)
10
I
10
10
10
10
10
(A)
D
400
I
300
200
100
D
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
20
16
2
min
2
14
4
typ
12
V
GS
6
9.5
5
4.5
8.5
7.5
7
6.5
5.5
9
8
6
(V) = 10
4
max
V
8
GS
V
(V)
DS
03nh87
03nj47
(V)
Rev. 05 — 17 February 2009
10
6
Fig 6.
Fig 8.
V
DSR(CL)
R
(mΩ)
(V)
42.0
41.5
41.0
40.5
DSon
30
25
20
15
10
5
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Drain-source clamping voltage as a function of
0
5
N-channel TrenchPLUS standard level FET
2
BUK7L11-34ARC
10
T
T
T
j
j
j
= 175 °C
= 25 °C
= -55 °C
4
6
15
© NXP B.V. 2009. All rights reserved.
V
8
GS
I
03nj46
(V)
D
03nj57
(A)
20
10
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