M95256-WMN3TP/AB STMicroelectronics, M95256-WMN3TP/AB Datasheet - Page 30

• Manufacturer Part Number: M95256-WMN3TP/AB
• Manufacturer: STMicroelectronics

DC and AC parameters
Note:
30/47
Figure 19. AC measurement I/O waveform
Table 12.
1. Sampled only, not 100% tested.
Table 13.
This parameter is not tested but established by characterization and qualification. To
estimate endurance in a specific application, please refer to AN2014.
Table 14.
1. For all 5 V range devices, the device meets the output requirements for both TTL and CMOS standards.
C
C
N
Symbol
Symbol
OUT
IN
cycle
V
V
Symbol
I
OH
I
V
OL
I
CC1
V
I
CC
LO
LI
IH
IL
(1)
(1)
Input leakage current
Output leakage current
Supply current
Supply current
(Standby Power mode)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Endurance
Parameter
Output capacitance (Q)
Input capacitance (D)
Input capacitance (other pins)
Capacitance
Memory cell characteristics
DC characteristics (M95256, device grade 3)
Parameter
0.8V CC
0.2V CC
Input Levels
Parameter
(1)
T
A
Doc ID 12276 Rev 17
= 25°C, 1.8V < V
Test condition
Test conditions specified in
C = 0.1V
S = V
I
OH
I
Table 7
OL
V
S = V
CC
V
CC
V
= –2 mA, V
= 2 mA, V
IN
IN
, V
CC
= 5 V, Q = open
= V
= V
CC
OUT
/0.9V
M95256-DR, M95256, M95256-W, M95256-R
cc
and
, V
SS
SS
< 5.5V
Timing Reference Levels
= V
CC
or V
or V
Table 11
CC
CC
CC
= 5 V,
Test condition
SS
at 5 MHz,
CC
CC
= 5 V
V
= 5 V
V
V
Input and Output
or V
OUT
IN
IN
1,000,000
= 0 V
= 0 V
CC
= 0 V
AI00825B
Min.
0.7V CC
0.3V CC
0.7 V
0.8 V
–0.45
Min.
CC
CC
Max.
Max.
-
8
8
6
0.3 V
V
Max.
CC
± 2
± 2
0.4
4
5
Write cycle
+1
CC
Unit
Unit
pF
pF
pF
Unit
mA
µA
µA
µA
V
V
V
V