2SK2700(Q,T) Toshiba
2SK2700(Q,T)
Manufacturer Part Number
2SK2700(Q,T)
Description
MOSFET Power N-ch 900V 3A 3.7 ohm
Manufacturer
Toshiba
Specifications of 2SK2700(Q,T)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0043 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
3 A
Power Dissipation
400 W
Mounting Style
Through Hole
Package / Case
TO-220
Lead Free Status / Rohs Status
Details
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