TK12A60U(Q,M) Toshiba
TK12A60U(Q,M)
Manufacturer Part Number
TK12A60U(Q,M)
Description
MOSFET Power MOSFET DTMOS-II N-CH 600V, 12A
Manufacturer
Toshiba
Specifications of TK12A60U(Q,M)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220SIS
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
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