BZT52C3V6 Taiwan Semiconductor, BZT52C3V6 Datasheet - Page 3

• Manufacturer Part Number: BZT52C3V6
• Description: Zener Diodes 3.6 Volt 410mW 5%
• Manufacturer: Taiwan Semiconductor

Specifications of BZT52C3V6

• Zener Voltage: 3.6 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: - 1.75 mV / C
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 4.5 uA
• Maximum Zener Impedance: 90 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-123
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: RH

Small Signal Diode
Rating and Sharacteristic Curves
1000
1000
100
100
100
10
10
10
1
0
0
1
1
15
0.4
1
FIG 3 Zener Breakdown Characteristics
Bias at 50% of VZ(Nom)
0.5
FIG 1 Typical Forward Characteristics
25
FIG 5 Typical Capacitance
0.6
35
Forward Voltage (V)
Zener Voltage (V)
0.7
Zener Voltage (V)
45
0.8
10
Ta=25°C
55
0.9
1V Bias
Ta=150°C
Ta=25°C
1
65
1.1
75
100
1.2
500mW, 5% Tolerance SMD Zener Diode
1000
100
0.01
700
600
500
400
300
200
100
100
0.1
10
10
1
0
1
0
0
1
0
0
Iz=5mA
Iz=1mA
Iz=20m
Ta=25°C
FIG 6 Effect of Zener Voltage on Impedence
1
FIG 2 Zener Breakdown Characteristics
FIG 4 Admissible Power Disspation Curve
2
50
3
4
Ambient Tempeture (°C)
Zener Voltage (V)
Zener Voltage (V)
BZT52C2V4-BZT52C75
5
100
10
6
7
8
150
9
Version : C09
10
11
200
100
12