BUK9Y30-75B/C2,115 NXP Semiconductors, BUK9Y30-75B/C2,115 Datasheet - Page 4

• Manufacturer Part Number: BUK9Y30-75B/C2,115
• Description: MOSFET N-CH 75V 34A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y30-75B/C2,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 2070pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9Y30-75B_4
Product data sheet
Symbol
R
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
(A)
10
10
I
D
10
10
-1
-1
-2
3
2
1
1
T
10
mb
1
-6
δ = 0.5
0.2
0.05
0.02
Thermal characteristics
0.1
= 25 °C; I
single shot
Parameter
thermal resistance
from junction to
mounting base
DM
is single pulse
10
Limit R
-5
DSon
= V
Conditions
see
DS
/ I
D
Figure 5
10
-4
Rev. 04 — 10 April 2008
10
10
-3
10
Min
-
N-channel TrenchMOS logic level FET
-2
V
DS
(V)
BUK9Y30-75B
Typ
-
10
P
-1
t
p
DC
t
T
p
t
= 10 μs
Max
1.8
© NXP B.V. 2008. All rights reserved.
p
(s)
03no14
δ =
100 ms
100 μs
10 ms
1 ms
03nm01
t
T
p
t
10
1
2
Unit
K/W
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