BUK9Y30-75B/C2,115 NXP Semiconductors, BUK9Y30-75B/C2,115 Datasheet - Page 7

• Manufacturer Part Number: BUK9Y30-75B/C2,115
• Description: MOSFET N-CH 75V 34A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y30-75B/C2,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 2070pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
BUK9Y30-75B_4
Product data sheet
Fig 8. Transfer characteristics: drain current as a
Fig 10. Forward transconductance as a function of
(A)
(S)
g
I
D
fs
60
40
20
50
40
30
20
0
V
T
function of gate-source voltage; typical values
drain current; typical values
0
0
DS
j
= 25 °C;V
= 25V
1
T
10
j
T
DS
= 175 °C
j
= 25 °C
= 25V
2
20
3
30
4
I
V
D
GS
(A)
03no09
03no08
(V)
40
5
Rev. 04 — 10 April 2008
Fig 9. Output characteristics: drain current as a
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
100
2.5
2.0
1.5
1.0
0.5
75
50
25
0
0
T
function of drain-source voltage; typical values
−60
I
junction temperature
D
0
j
= 25 °C; t
= 1 m A;V
N-channel TrenchMOS logic level FET
2
p
DS
0
= 300 s
= V
GS
4
BUK9Y30-75B
60
max
min
typ
V
6
GS
(V) = 10
120
© NXP B.V. 2008. All rights reserved.
8
T
V
j
DS
(°C)
03no11
03ng52
(V)
7.0
5.0
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
180
10
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