MT46V64M8P-5B:J Micron Technology Inc, MT46V64M8P-5B:J Datasheet - Page 66

• Manufacturer Part Number: MT46V64M8P-5B:J
• Description: IC SDRAM 512MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V64M8P-5B:J

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 30:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
Command
Command
Command
Address
Address
Address
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Nonconsecutive READ Bursts
Notes:
Bank,
Bank,
Bank,
Col n
READ
Col n
READ
READ
Col n
T0
T0
T0
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
the first).
ing DO b.
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
NOP
NOP
NOP
T2
T2
T2
t
AC,
DO
n
t
T2n
T2n
DQSCK, and
66
DO
n
Bank,
Col b
Bank,
Bank,
Col b
Col b
READ
READ
READ
T3
T3
T3
DO
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
T3n
T3n
T3n
512Mb: x4, x8, x16 DDR SDRAM
T4
T4
T4
NOP
NOP
NOP
Transitioning Data
T4n
T5
T5
T5
NOP
NOP
NOP
©2000 Micron Technology, Inc. All rights reserved.
DO
b
T5n
T5n
Don’t Care
DO
b
Operations
T6
T6
T6
NOP
NOP
NOP
DO
b