MT46V64M8P-5B:J Micron Technology Inc, MT46V64M8P-5B:J Datasheet - Page 86

• Manufacturer Part Number: MT46V64M8P-5B:J
• Description: IC SDRAM 512MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V64M8P-5B:J

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 50:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
Command
BA0, BA1
Address
DQ
DQS
CK#
CKE
A10
DM
CK
5
t IS
t IS
NOP
T0
WRITE – DM Operation
t IH
1
t IH
Notes:
Bank x
t IS
t IS
ACT
Row
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 51 on page 87 for detailed DQ timing.
t IH
t IH
t CK
times.
t RCD
t RAS
NOP
T2
1
t CH
t CL
WRITE
Bank x
t IS
3
Col n
T3
t DQSS (NOM)
t IH
2
t WPRES t WPRE
t DS
86
NOP
T4
DI
b
1
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t DQSL
NOP
T5
512Mb: x4, x8, x16 DDR SDRAM
t DQSH
1
T5n
t WPST
NOP
T6
1
Transitioning Data
©2000 Micron Technology, Inc. All rights reserved.
t WR
NOP
T7
1
Operations
All banks
One bank
Bank x
Don’t Care
PRE
T8
4
t RP