MT41J64M16JT-187E:G Micron Technology Inc, MT41J64M16JT-187E:G Datasheet - Page 133

• Manufacturer Part Number: MT41J64M16JT-187E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J64M16JT-187E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 533MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 96-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 74: READ (BC4) to WRITE (BC4) OTF
Figure 75: READ to PRECHARGE (BL8)
DQS, DQS#
Command
Command 1
DQS, DQS#
Address
Address 2
CK#
DQ
CK
DQ 3
CK#
CK
Bank a,
READ
Col n
T0
READ
Bank,
Col n
T0
READ-to-WRITE command delay = RL + t CCD/2 + 2 t CK - WL
NOP
T1
Notes:
NOP
T1
NOP
T2
t RAS
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BC4 OTF setting is activated by MR0[1:0] and A12 = 0 during READ command at T0 and WRITE command at T4.
3. DO n = data-out from column n; DI n = data-in from column b.
4. BC4, RL = 5 (AL - 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
NOP
t RTP
T2
RL = 5
NOP
T3
NOP
T3
NOP
T4
WRITE
T4
Bank a,
Bank,
(or all)
Col b
PRE
T5
t RPRE
NOP
T5
NOP
T6
DO
n
DO
n + 1
NOP
T6
NOP
T7
n + 2
DO
WL = 5
t RPST
n + 3
DO
NOP
NOP
T8
T7
DO
n
n + 1
DO
NOP
t RP
T9
NOP
T8
n + 2
DO
t WPRE
n + 3
DO
NOP
T10
n + 4
NOP
DO
T9
DI
n
n + 5
DO
n + 1
DI
NOP
T11
n + 6
DO
n + 2
NOP
T10
DI
n + 7
DO
n + 3
t BL = 4 clocks
DI
T12
NOP
t WPST
NOP
T11
Bank a,
Row b
ACT
T13
NOP
T12
T14
NOP
Transitioning Data
NOP
T13
T15
NOP
Transitioning Data
NOP
T14
NOP
T16
t WTR
t WR
Don’t Care
NOP
T15
Don’t Care
NOP
T17