MT41J64M16JT-187E:G Micron Technology Inc, MT41J64M16JT-187E:G Datasheet - Page 49

• Manufacturer Part Number: MT41J64M16JT-187E:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J64M16JT-187E:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 533MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 96-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ODT Characteristics
Figure 24: ODT Levels and I-V Characteristics
Table 29:
ODT Resistors
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Parameter/Condition
R
Deviation of VM with respect to V
TT
effective impedance
On-Die Termination DC Electrical Characteristics
Notes:
ODT effective resistance R
DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values are
listed in Table 29 and Table 30 on page 50. A functional representation of the ODT is
shown in Figure 24. The individual pull-up and pull-down resistors (R
are defined as follows:
• R
• R
1. Tolerance limits are applicable after proper ZQ calibration has been performed at a stable
2. Measurement definition for R
3. Measure voltage (VM) at the tested pin with no load:
Table 30 on page 50 provides an overview of the ODT DC electrical characteristics. The
values provided are not specification requirements; however, they can be used as design
guidelines to indicate what R
• R
• R
• R
• R
• R
temperature and voltage (V
either the temperature or voltage changes after calibration.
I[V
To
other
circuitry
such as
RCV, . . .
TT PU
TT PD
TT
TT
TT
TT
TT
IH
DD
120Ω is made up of R
60Ω is made up of R
40Ω is made up of R
30Ω is made up of R
20Ω is made up of R
(
Chip in termination mode
AC
Q/2
= (V
= (V
)], then apply V
OUT
DD
R
R
TT PU
TT PD
I
I
R
ODT
PU
PD
Q - V
TT
ΔVM
)/|I
Symbol
R
=
ΔVM
TT
OUT
OUT
_
------------------------------------------------------------- -
|I V
=
EFF
(
|, under the condition that R
IL
V
⎛
⎝
)/|I
(
IH AC
2
----------------- - 1
AC
IH AC
V
TT
TT 60PD120
TT 40PD80
TT 30PD60
TT 20PD40
×
DD
OUT
(
TT 120PD240
) to pin under test and measure current I[V
(
DD
is defined by MR1[9, 6, and 2]. ODT is applied to the DQ,
TT
VM
49
Q
TT
Q = V
)
|, under the condition that R
) V
is targeted to provide:
) I V
I
I
: Apply V
OUT
OUT
–
–
–
Min
–5
(
= I
and R
and R
and R
⎞
⎠
DD
IL AC
and R
PD
V
DQ
V
V
IL AC
×
(
DD
OUT
SS
, V
- I
and R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
100
Q
(
Q
PU
SS
IH
)
TT 20PU40
TT 40PU80
TT 30PU60
Q = V
(
TT 60PU120
See Table 30 on page 50
)
AC
)|
TT 120PU240
) to pin under test and measure current
Nom
SS
1Gb: x4, x8, x16 DDR3 SDRAM
). Refer to "ODT Sensitivity" on page 50 if
TT PU
is turned off
TT PD
Max
©2006 Micron Technology, Inc. All rights reserved.
ODT Characteristics
+5
is turned off
IL
(
TT PU
AC
)]:
Units
%
and R
TT PD
Notes
1, 2, 3
1, 2
)