MT18HTF25672PDZ-667H1 Micron Technology Inc, MT18HTF25672PDZ-667H1 Datasheet - Page 10

• Manufacturer Part Number: MT18HTF25672PDZ-667H1
• Description: MODULE DDR2 SDRAM 2GB 240RDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18HTF25672PDZ-667H1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Features: -
• Package / Case: 240-RDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
PDF: 09005aef83d3d893
htf18c128_256_512x72pdz.pdf - Rev. D 11/10 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
T
/V
OZ
I
C
A
I
1
DDQ
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
pins not under test = 0V)
Output leakage current; 0V ≤ V
DQs and ODT are disabled
V
DDR2 SDRAM device operating case temper-
ature
Module ambient operating temperature
DD
DD
REF
/V
; V
leakage current; V
2
DDQ
REF
Notes:
input 0V ≤ V
supply voltage relative to V
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
1. The refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
able on Micron’s Web site.
1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
IN
REF
≤ 0.95V; (All other
= Valid V
OUT
SS
≤ V
REF
SS
DDQ
level
IN
≤
;
Command/Address RAS#,
CAS#, WE# S#, CKE, ODT, BA
CK, CK#
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
exceeds 85°C < T
Electrical Specifications
–250
Min
–0.5
–0.5
–10
–36
–40
–40
–5
0
0
© 2009 Micron Technology, Inc. All rights reserved.
C
≤ 95°C.
Max
250
2.3
2.3
10
36
85
95
70
85
5
Units
µA
µA
µA
°C
°C
V
V