MT18HTF25672PDZ-667H1 Micron Technology Inc, MT18HTF25672PDZ-667H1 Datasheet - Page 13

• Manufacturer Part Number: MT18HTF25672PDZ-667H1
• Description: MODULE DDR2 SDRAM 2GB 240RDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18HTF25672PDZ-667H1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Features: -
• Package / Case: 240-RDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 10: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
Table 11: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef83d3d893
htf18c128_256_512x72pdz.pdf - Rev. D 11/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving reads,
I
t
commands; Address bus inputs are stable during deselects; Data bus inputs are
switching
Parameter
Operating one bank active-precharge current:
t
bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
CL (I
(I
switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
LOW; Other control and address bus inputs are stable; Data bus inputs are floating
Precharge quiet standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are stable; Data bus inputs
are floating
Precharge standby current: All device banks idle;
is HIGH; Other control and address bus inputs are switching; Data bus inputs are
switching
Active power-down current: All device banks open;
(I
Data bus inputs are floating
Active standby current: All device banks open;
(I
trol and address bus inputs are switching; Data bus inputs are switching
Operating burst write current: All device banks open; Continuous burst writes;
BL = 4, CL = CL (I
CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are switching;
Data bus inputs are switching
OUT
RC (I
RAS =
DD
DD
DD
); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs are
); CKE is LOW; Other control and address bus inputs are stable;
),
DD
= 0mA; BL = 4, CL = CL (I
DD
t
RP =
), AL = 0;
t
),
RAS MIN (I
t
RRD =
t
RP (I
t
DD
DD
t
CK =
RRD (I
DD
); CKE is HIGH, S# is HIGH between valid commands; Other con-
), AL = 0;
DD
DD
); CKE is HIGH, S# is HIGH between valid commands; Address
Notes:
t
CK (I
Specifications and Conditions – 1GB, Die Revision G (Continued)
Specifications and Conditions – 2GB, Die Revision H
DD
),
DD
t
t
RCD =
DD
CK =
),
1. Value calculated as one module rank in this operating condition. All other module ranks
2. Value calculated reflects all module ranks in this operating condition.
), AL =
t
RC =
in I
t
CK (I
t
DD4W
1GB, 2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
RCD (I
DD2P
t
RC (I
t
RCD (I
DD
DD
(CKE LOW) mode.
),
DD
t
); CKE is HIGH, S# is HIGH between valid
RAS =
),
DD
t
) - 1 ×
RAS =
t
CK =
t
RAS MAX (I
t
CK =
t
CK =
t
t
CK (I
RAS MIN (I
t
CK =
t
CK (I
t
t
OUT
CK (I
CK =
t
DD
t
CK (I
CK =
13
t
DD
);
CK
= 0mA; BL = 4, CL =
DD
DD
t
),
CK =
t
DD
CK (I
t
DD
),
),
t
CK (I
); CKE is HIGH, S#
RAS =
t
t
),
RP =
RC =
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
DD
t
CK (I
RCD =
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
); CKE is
t
); CKE is
t
t
RAS MAX
RP (I
RC (I
DD
),
t
RCD
DD
DD
t
RC =
);
),
Symbol
Symbol
I
I
I
I
I
I
DD4W
I
I
I
DD2Q
DD2N
DD3N
DD2P
DD3P
DD7
DD0
DD1
1
1
1
2
2
2
2
2
2
© 2009 Micron Technology, Inc. All rights reserved.
I
-80E/
-80E/
DD
1413
1188
-800
-800
648
738
126
432
504
360
180
594
Specifications
1323
1098
-667
-667
603
693
126
432
432
270
180
540
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA