MT49H16M36BM-33:A Micron Technology Inc, MT49H16M36BM-33:A Datasheet - Page 74
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MT49H16M36BM-33:A
Manufacturer Part Number
MT49H16M36BM-33:A
Description
Manufacturer
Micron Technology Inc
Type
RLDRAMr
Datasheet
1.MT49H16M36BM-33A.pdf
(76 pages)
Specifications of MT49H16M36BM-33:A
Organization
16Mx36
Address Bus
23b
Operating Supply Voltage (typ)
1.8V
Package Type
uBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Pin Count
144
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Table 26:
Table 27:
Table 28:
PDF: 09005aef80a41b46/Source: 09005aef809f284b
RLDRAM_II_CIO_Core.fm - Rev. D 12/10 EN
Description
Instruction Field
Input high (logic 1) voltage
Input low (logic 0) voltage
Input leakage current
Output leakage current
Output low voltage
Output low voltage
Output high voltage
Output high voltage
Revision number (31:28)
Device ID (27:12)
Micron JEDEC ID code (11:1)
ID register presence indicator (0)
TAP DC Electrical Characteristics and Operating Conditions
+0°C ≤ T
Identification Register Definitions
Scan Register Sizes
Notes:
C
≤ +95°C; +1.7V ≤ V
1. All voltages referenced to Vss (GND).
2. Overshoot = V
Register Name
Instruction
Bypass
ID
Boundary scan
ing normal operation, V
576Mb: x9, x18, x36 2.5V V
Output disabled,
0V ≤ V
00jkidef10100111 def = 000 for 288Mb, 001 for 576Mb
0V ≤ V
|I
I
|I
OHc
OLc
Condition
I
00000101100
OHt
All Devices
OLt
DD
| = 100µA
= 100µA
| = 2mA
IN
= 2mA
abcd
IN
≤ +1.9V, unless otherwise noted
IH(AC)
1
≤ V
≤ V
DDQ
DD
≤ V
DD
DDQ
+ 0.7V for t ≤
ab = 00 for Die Rev. A, 01 for Die Rev. B
cd = 00 for x9, 01 for x18, 10 for x36
i = 0 for common I/O, 1 for separate I/O
jk = 01 for RLDRAM II, 00 for RLDRAM
Allows unique identification of RLDRAM vendor
Indicates the presence of an ID register
Symbol
must not exceed V
74
V
V
V
V
V
V
I
OH1
OH2
I
LO
OL1
OL2
LI
IH
IL
IEEE 1149.1 Serial Boundary Scan (JTAG)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CK/2; undershoot = V
V
V
V
EXT
V
REF
DDQ
DDQ
SSQ
Min
–5.0
–5.0
, 1.8V V
+ 0.15
DD
- 0.3
- 0.2
- 0.4
.
Description
V
V
DD
REF
DD
Max
5.0
5.0
0.2
0.4
, HSTL, CIO, RLDRAM II
- 0.15
+ 0.3
IL(AC)
©2004 Micron Technology, Inc. All rights reserved.
Bit Size
113
≥ –0.5V for t ≤
32
8
1
Units
µA
µA
V
V
V
V
V
V
t
CK/2; dur-
Notes
1, 2
1, 2
1
1
1
1