TC58NVG0S3EBAI4 Toshiba, TC58NVG0S3EBAI4 Datasheet
TC58NVG0S3EBAI4
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TC58NVG0S3EBAI4 Summary of contents
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SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2010/9 SCE0004K ...
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... Part Number (bit) (2048 + 64 TC58NVM9S3ETA00 * 512 Mbits (2048 + 64 TC58NVM9S3EBAI3 * 512 Mbits (2048 + 64 TC58NVG0S3ETA00 1 Gbits (2048 + 64 TC58NVG0S3EBAI4 1 Gbits (2048 + 64 TC58NVG1S3ETA00 2 Gbits (2048 + 64 TC58NVG1S3EBAI5 2 Gbits (2048 + 64 TC58NVG2S3ETA00 4 Gbits (2048 + 64 TC58NVG2S3EBAI5 4 Gbits • Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ...
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... GByte • Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *1: NAND flash memories with an integrated controller, which supports error correction, wear leveling, bad block management and so on. This eliminates the need for external control specifically required for NAND flash and simplifies use of eSD ...
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... In addition to the above, the following are applicable only to development tools. Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Use the Product in a way which minimizes risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. For using the Product, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information, including without limitation, this document, the instruction manual, the specifications, the data sheets for Product ...