74LVC1G66GW,125 NXP Semiconductors, 74LVC1G66GW,125 Datasheet - Page 14

IC SWITCH SPST 5TSSOP

74LVC1G66GW,125

Manufacturer Part Number
74LVC1G66GW,125
Description
IC SWITCH SPST 5TSSOP
Manufacturer
NXP Semiconductors
Series
74LVCr
Type
Analog Switchr
Datasheet

Specifications of 74LVC1G66GW,125

Package / Case
6-TSSOP (5 lead), SC-88A, SOT-353
Function
Switch
Circuit
1 x SPST- NO
On-state Resistance
6 Ohm
Voltage Supply Source
Single Supply
Voltage - Supply, Single/dual (±)
1.65 V ~ 5.5 V
Current - Supply
0.1µA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Switch Configuration
SPST
On Resistance (max)
34 Ohm (Typ) @ 1.95 V
On Time (max)
5.3 ns (Typ) @ 1.95 V
Off Time (max)
4.2 ns (Typ) @ 1.95 V
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.65 V
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Switch Current (typ)
0.0001 mA @ 3.3 V
Multiplexer Configuration
Single SPST
Number Of Inputs
1
Number Of Outputs
1
Number Of Channels
1
Analog Switch On Resistance
34@1.95VOhm
Package Type
TSSOP
Power Supply Requirement
Single
Single Supply Voltage (min)
1.65V
Single Supply Voltage (typ)
3/5V
Single Supply Voltage (max)
5.5V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Power Dissipation
250mW
Mounting
Surface Mount
Pin Count
5
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4614-2
74LVC1G66GW-G
74LVC1G66GW-G
935269058125
NXP Semiconductors
Table 12.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); T
74LVC1G66
Product data sheet
Symbol
Q
Fig 19. Test circuit for measuring total harmonic distortion
Fig 20. Test circuit for measuring the frequency response when switch is in ON-state
inj
Test conditions:
V
V
V
V
Adjust f
CC
CC
CC
CC
Additional dynamic characteristics
Parameter
charge injection
= 1.65 V: V
= 2.3 V: V
= 3 V: V
= 4.5 V: V
11.3 Test circuits
i
voltage to obtain 0 dBm level at output. Increase f
i
= 2.5 V (p-p).
i
i
= 2 V (p-p).
= 4 V (p-p).
i
= 1.4 V (p-p).
f i
V
IH
V
IH
0.1 μF
f i
50 Ω
All information provided in this document is subject to legal disclaimers.
C
Conditions
f
i
L
= 1 MHz; R
V
V
V
V
V
= 0.1 nF; V
CC
CC
CC
CC
CC
600 Ω
Y/Z
Y/Z
E
…continued
= 1.8 V
= 2.5 V
= 3.3 V
= 4.5 V
= 5.5 V
E
Rev. 7 — 30 July 2010
V
L
CC
V
gen
= 1 MΩ; see
CC
= 0 V; R
i
frequency until dB meter reads −3 dB.
Z/Y
Z/Y
0.5V
0.5V
gen
Figure 23
CC
CC
R L
= 0 Ω;
R L
C L
C L
10 μF
001aam392
dB
D
001aam393
V
O
amb
V
Min
-
-
-
-
-
O
= 25
74LVC1G66
Typ
3.3
4.1
5.0
6.4
7.5
°
C.
© NXP B.V. 2010. All rights reserved.
Bilateral switch
Max
-
-
-
-
-
Unit
pC
pC
pC
pC
pC
14 of 25

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