BUK9508-55B NXP Semiconductors, BUK9508-55B Datasheet - Page 11
BUK9508-55B
Manufacturer Part Number
BUK9508-55B
Description
MOSFET Power HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9508-55B.pdf
(14 pages)
Specifications of BUK9508-55B
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
110 A
Power Dissipation
203 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
86 ns
Minimum Operating Temperature
- 55 C
Rise Time
123 ns
Lead Free Status / Rohs Status
Details
Other names
BUK9508-55B,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK9508-55B
Manufacturer:
NXP
Quantity:
81 000
NXP Semiconductors
8. Revision history
Table 7.
BUK9508-55B
Product data sheet
Document ID
BUK9508-55B v.3
Modifications:
BUK95_96_9E08 v.2
(9397 750 12052)
Revision history
Release date
20100615
20030313
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9508-55B separated from data sheet BUK95_96_9E08 v.2.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data
Product data sheet
Rev. 03 — 15 June 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9508-55B
Supersedes
BUK95_96_9E08 v.2
-
© NXP B.V. 2010. All rights reserved.
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