M58BW016DB80T3F Micron Technology Inc, M58BW016DB80T3F Datasheet - Page 33

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M58BW016DB80T3F

Manufacturer Part Number
M58BW016DB80T3F
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M58BW016DB80T3F

Lead Free Status / Rohs Status
Not Compliant
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 10.
1. T
Parameter Block (64 Kbits)
Program
Main Block (512 Kbits)
Program
Parameter Block Erase
Main Block Erase
Program Suspend Latency
time
Erase Suspend Latency time
Program/Erase cycles (per
block)
A
= –40 to 125 °C, V
Parameters
Program, erase times and program, erase endurance cycles
DD
= 2.7 V to 3.6 V, V
100,000
Min
DDQ
V
PP
0.030
= 2.4 V to V
0.23
0.8
1.5
= V
DD
Typ
10
3
V
DD
M58BW016
PP
0.016
0.13
0.64
.
0.9
= 12 V V
PP
0.060
0.46
1.8
= V
3
DD
Command interface
Max
10
30
V
PP
0.032
0.26
1.5
1.8
(1)
= 12 V
cycles
Unit
33/70
µs
µs
s
s
s
s

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