LH28F320BFHE-PTTL60 Sharp Electronics, LH28F320BFHE-PTTL60 Datasheet - Page 28

• Manufacturer Part Number: LH28F320BFHE-PTTL60
• Manufacturer: Sharp Electronics

Specifications of LH28F320BFHE-PTTL60

• Cell Type: NOR
• Density: 32Mb
• Access Time (max): 60ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 21b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 11.7 to 12.3V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 2M
• Supply Current: 25mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

sharp
1.2.5 AC Characteristics - Write Operations
NOTES:
1. The timing characteristics for reading the status register during block erase, full chip erase, (page buffer) program and
2. A write operation can be initiated and terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (t
5. Write pulse width high (t
6. t
7. Refer to Table 6 for valid address and data for block erase, full chip erase, (page buffer) program, OTP program or lock bit
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
DVWH
AVWH
WHEH
WHDX
WHAX
WHWL
SHWH
WHGL
QVSL
WHR0
WHRL
OTP program operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
CE# or WE# (whichever goes high first). Hence, t
edge of CE# or WE# (whichever goes low last). Hence, t
configuration.
WHR0
Symbol
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
WLEL
PHEL
EHR0
(t
AVEH
SHEH
EHRL
EHWH
EHGL
ELEH
DVEH
EHDX
EHAX
EHEL
EHR0
)
)
)
)
)
)
)
)
)
)
)
)
)
) after the Read Query or Read Identifier Codes/OTP command=t
Write Cycle Time
RST# High Recovery to WE# (CE#) Going Low
CE# (WE#) Setup to WE# (CE#) Going Low
WE# (CE#) Pulse Width
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
WE# (CE#) Pulse Width High
WP#/ACC High Setup to WE# (CE#)
Going High
Write Recovery before Read
WP#/ACC High Hold from Valid SRD, RY/BY# High Z
WE# (CE#) High to SR.7 Going "0"
WE# (CE#) High to RY/BY# Going Low
WP
) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of
WPH
) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling
V
CC
=2.7V-3.6V, T
Parameter
WP
(1), (2)
LHF32FB2
=t
WLWH
WPH
A
=-40°C to +85°C
=t
=t
WP#/ACC=V
WP#/ACC=V
WHWL
ELEH
=t
=t
WLEH
EHEL
=t
ACCH
IH
=t
ELWH
WHEL
AVQV
.
+100ns.
=t
Notes
3, 6
EHWL
3
4
7
7
5
3
3
3
.
Min.
150
200
60
45
40
45
15
30
0
0
0
0
0
0
t
Max.
AVQV
+50
100
Rev. 2.44
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
25