AM29F016B-90EC AMD (ADVANCED MICRO DEVICES), AM29F016B-90EC Datasheet
AM29F016B-90EC
Specifications of AM29F016B-90EC
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AM29F016B-90EC Summary of contents
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... Am29F016B 16 Megabit ( 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS 5.0 V 10%, single power supply operation — Minimizes system level power requirements Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device High performance — Access times as fast Low power consumption — ...
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... GENERAL DESCRIPTION The Am29F016B Mbit, 5.0 volt-only Flash mem- ory organized as 2,097,152 bytes. The 8 bits of data appear on DQ0–DQ7. The Am29F016B is offered in 48-pin and 40-pin TSOP, and 44-pin SO packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21551 ...
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... V Detector CC A0–A20 5%) -75 10 Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F016B Am29F016B -90 -120 -150 90 120 150 90 120 150 – DQ0 DQ7 Input/Output Buffers Data STB Latch Y-Gating Cell Matrix 21444D-1 ...
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... A10 A20 WE# 3 OE# 4 RY/BY# 5 DQ7 6 DQ6 7 DQ5 8 DQ4 DQ3 13 DQ2 14 DQ1 15 DQ0 40-Pin Standard TSOP 40-Pin Reverse TSOP Am29F016B 40 A20 WE# 37 OE# 36 RY/BY# 35 DQ7 34 DQ6 33 DQ5 32 DQ4 DQ3 27 DQ2 26 DQ1 25 DQ0 21444D-2 40 A19 39 A18 38 A17 37 A16 36 A15 35 A14 34 A13 33 A12 ...
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... A10 A20 WE# 5 OE# 6 RY/BY# 7 DQ7 8 DQ6 9 DQ5 10 DQ4 DQ3 15 DQ2 16 DQ1 17 DQ0 48-Pin Standard TSOP 48-Pin Reverse TSOP Am29F016B A20 WE# 43 OE# 42 RY/BY# 41 DQ7 40 DQ6 39 DQ5 38 DQ4 DQ3 33 DQ2 32 DQ1 31 DQ0 21444D A19 45 A18 44 A17 43 A16 42 A15 41 A14 40 A13 39 A12 ...
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... V = +5.0 V single power supply CC (see Product Selector Guide for device speed ratings and voltage supply tolerances Device Ground Pin Not Connected Internally LOGIC SYMBOL 21 Am29F016B CE# 42 A12 41 A13 40 A14 39 A15 38 A16 37 A17 36 A18 35 A19 A20 WE# 29 OE# 28 RY/BY# 27 DQ7 26 DQ6 25 DQ5 ...
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... V Read, Program, and Erase Valid Combinations AM29F016B-75 EC, EI, FC, FI 5.0 V 5%) E4C, E4I, F4C, F4I, SC AM29F016B-90 EC, EI, EE, FC, FI, FE, AM29F016B-120 E4C, E4I, E4E, F4C, F4I, F4E, SC, SI, SE AM29F016B-150 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-In (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial ( + Industrial (– ...
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... The command register itself does not occupy any addressable memory location. The register is composed of latches that store the com- mands, along with the address and data information needed to execute the command. The contents of the Table 1. Am29F016B Device Bus Operations Operation Read Write CMOS Standby ...
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... CC3 Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state Am29F016B , the device enters IL SS (during Embedded Algorithms). The (not during Embedded Algo- READY after the RE- RH ...
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... Table 2. Sector Address Table A18 A17 A16 Am29F016B Address Range 000000h-00FFFFh 010000h-01FFFFh 020000h-02FFFFh 030000h-03FFFFh 040000h-04FFFFh 050000h-05FFFFh 060000h-06FFFFh 070000h-07FFFFh 080000h-08FFFFh 090000h-09FFFFh 0A0000h-0AFFFFh 0B0000h-0BFFFFh 0C0000h-0CFFFFh 0D0000h-0DFFFFh 0E0000h-0EFFFFh 0F0000h-0FFFFFh 100000h-10FFFFh 110000h-11FFFFh 120000h-12FFFFh 130000h-13FFFFh 140000h-14FFFFh 150000h-15FFFFh 160000h-16FFFFh 170000h-17FFFFh 180000h-18FFFFh 190000h-19FFFFh 1A0000h-1AFFFFh 1B0000h-1BFFFFh 1C0000h-1CFFFFh 1D0000h-1DFFFFh 1E0000h-1EFFFFh 1F0000h-1FFFFFh ...
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... When using programming equipment, the autoselect mode requires V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage Method) table. In ad- dition, when verifying sector protection, the sector ad- Table 3. Am29F016B Autoselect Codes (High Voltage Method) Description CE# OE# WE# A20-A18 A17-A10 Manufacturer ID ...
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... CE# and WE# must be a logical zero while OE logical one. Power-Up Write Inhibit If WE device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. Am29F016B power-up and CC Write Inhibit is less than V , the device does not ac- LKO ...
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... When the Embedded Program algorithm is complete, the device then returns to reading array data and ad- dresses are no longer latched. The system can deter- mine the status of the program operation by using DQ7, DQ6, or RY/BY#. See “Write Operation Status” for information on these status bits. Am29F016B 13 ...
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... It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the Am29F016B ...
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... The system must write the Erase Resume command (address bits are “don’t care”) to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the de- vice has resumed erasing. Am29F016B 15 ...
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... Write Erase Command Sequence Data Poll from System No Data = FFh? Yes Erasure Completed Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation 16 Embedded Erase algorithm in progress 21444D-9 Am29F016B ...
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... Table 5. Am29F016B Command Definitions Command Sequence (Note 1) Read (Note 5) 1 Reset (Note 6) 1 Manufacturer ID 4 Autoselect Device ID 4 (Note 7) Sector Group Protect 4 Verify (Note 8) Program 4 Chip Erase 6 Sector Erase 6 Erase Suspend (Note 9) 1 Erase Resume (Note 10) 1 Legend Don’t care RA = Address of the memory location to be read ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29F016B Yes Yes PASS 21444D-10 ...
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... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not complete the operation successfully, and Am29F016B 19 ...
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... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 5. Toggle Bit Algorithm Am29F016B (Note 1) No (Notes Program/Erase Operation Complete 21444D-11 ...
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... See “DQ5: Exceeded Timing Limits” for more information. Table 6. Write Operation Status DQ7 DQ5 (Note 1) DQ6 (Note 2) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29F016B DQ2 DQ3 (Note 1) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N ...
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... Supply Voltages CC V for ± 5% devices . . . . . . . . . . +4. +5. for ± 10% devices . . . . . . . . . . . +4 +5 Operating ranges define those limits between which the functionality of the device is guaranteed. to –2 2.0 V for +2 +0.5 V 2.0 V 21444D-12 Figure 7. Maximum Positive Overshoot Am29F016B ) . . . . . . . . . . . + .– + .–55°C to +125° 21444D-13 Waveform ...
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... OE IL Max RESET 0 Max RESET Min –2.5 mA Min –100 Min Am29F016B Min Typ Max Unit 1.0 µA 50 µA 1.0 µ 0.4 1.0 mA 0.4 1.0 mA –0.5 0 11.5 12.5 V 0.45 V 2.4 V 3.2 4.2 V Min Typ Max Unit 1.0 µA 50 µ ...
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... Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement 21444D-14 reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F016B All speed options Unit 1 TTL gate L 100 0.45–2 ...
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... Max OE OE Max IL Max Read Min Toggle and Min Data# Polling Max Max Min Max t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 9. Read Operation Timings Am29F016B Speed Options -75 -90 -120 -150 70 90 120 150 70 90 120 150 70 90 120 150 ...
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... Not 100% tested. RY/BY# CE#, OE# RESET# RY/BY# CE#, OE# RESET# 26 Test Setup Max Max Min Min Min Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 10. RESET# Timings Am29F016B All Speed Options Unit 20 µs 500 ns 500 21444D-16 ...
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... Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. Parameter Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Max Min Min Am29F016B Speed Options -75 -90 -120 -150 Unit 70 90 120 150 ...
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... Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY# t VCS V CC Note program address program data WPH A0h t BUSY is the true data at the program address. OUT Figure 11. Program Operation Timings Am29F016B Read Status Data (last two cycles WHWH1 Status D OUT t RB 21444D-17 ...
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... AC CHARACTERISTICS t WC Addresses 2AAh CE# OE Data RY/BY# t VCS V CC Note Sector Address Valid Address for reading status data. Figure 12. Chip/Sector Erase Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase Am29F016B WHWH2 In Complete Progress t t BUSY RB 21444D-18 29 ...
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... Figure 14. Toggle Bit Timings (During Embedded Algorithms Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F016B VA High Z True Valid Data High Z True Valid Data 21444D- Valid Status Valid Data (stops toggling) 21444D-20 ...
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... RY/BY# Figure 16. Temporary Sector Group Unprotect Timings Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 15. DQ2 vs. DQ6 Min Min Program or Erase Command Sequence t RSP Am29F016B Erase Resume Erase Erase Complete Read 21444D-21 All Speed Options 500 VIDR 21444D-22 ...
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... WHWH2 WHWH2 Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 32 Parameter Description Min Min Min Min Min Min Min Min Min Min Typ Typ Max Am29F016B Speed Options -75 -90 -120 -150 70 90 120 150 ...
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... Figure 17. Alternate CE# Controlled Write Operation Timings PA for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F016B PA DQ7# D OUT = Array Data. OUT 21444D-23 33 ...
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... V, 1,000,000 cycles 5.0 Volt, one pin at a time. CC Test Conditions OUT Test Conditions 150 C 125 C Am29F016B Unit Comments sec Excludes 00h programming prior to erasure (Note 4) sec µs Excludes system-level overhead (Note 5) sec , 1,000,000 cycles. Additionally, CC Min Max –1 1 – ...
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... PHYSICAL DIMENSIONS TS 040—40-Pin Standard Thin Small Outline Package (measured in millimeters) Am29F016B Dwg rev AA; 10/99 35 ...
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... PHYSICAL DIMENSIONS (continued) TSR040—40-Pin Reverse Thin Small Outline Package (measured in millimeters) 36 Am29F016B Dwg rev AA; 10/99 ...
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... PHYSICAL DIMENSIONS (continued) TS 048—48-Pin Standard Thin Small Outline Package (measured in millimeters) Am29F016B Dwg rev AA; 10/99 37 ...
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... PHYSICAL DIMENSIONS (continued) TSR048—48-Pin Reverse Thin Small Outline Package (measured in millimeters) 38 Am29F016B Dwg rev AA; 10/99 ...
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... PHYSICAL DIMENSIONS (continued) SO 044—44-Pin Small Outline Package (measured in millimeters) 39 Am29F016B Dwg rev AC; 10/99 ...
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... Added references to availability of device in Known Good Die (KGD) form. Revision D (November 16, 1999) AC Characteristics—Figure 11. Program Operations Timing and Figure 12. Chip/Sector Erase Operations Deleted t GHWL high. Physical Dimensions Replaced figures with more detailed illustrations. Am29F016B , I : Added Note 2 “Maximum I CC4 = V ”. CC CCmax = V Max. CC ...