BFQ68 NXP Semiconductors, BFQ68 Datasheet - Page 2

• Manufacturer Part Number: BFQ68
• Manufacturer: NXP Semiconductors

Specifications of BFQ68

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 300mA
• Dc Current Gain (min): 25
• Power Dissipation: 4.5W
• Frequency (max): 4GHz
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
DESCRIPTION
NPN transistor mounted in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features very
high output voltage capabilities.
It is primarily intended for final stages
in MATV system amplifiers, and is
also suitable for use in low power
band IV and V equipment.
QUICK REFERENCE DATA
September 1995
V
I
P
f
V
P
ITO
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
SYMBOL
C
T
CEO
tot
o
L1
NPN 4 GHz wideband transistor
collector-emitter voltage
collector current
total power dissipation
transition frequency
output voltage
output power at 1 dB gain
compression
third order intercept point
PARAMETER
PINNING
PIN
1
2
3
4
collector
emitter
base
emitter
open base
up to T
I
T
I
d
f
I
f = 800 MHz; T
I
f = 800 MHz; T
WARNING
C
c
(p q r)
c
c
im
DESCRIPTION
j
= 240 mA; V
= 240 mA; V
= 240 mA; V
= 25 C
= 240 mA; V
= 60 dB; R
2
c
= 793.25 MHz; T
= 110 C
CONDITIONS
CE
CE
CE
CE
amb
amb
L
= 75 ;
= 15 V;
= 15 V; R
= 15 V; R
= 15 V; f = 500 MHz;
= 25 C
= 25 C
amb
L
L
fpage
= 25 C
= 75 ;
= 75 ;
Top view
Fig.1 SOT122A.
1
4
1.6
28
47
Product specification
TYP.
4
2
18
300
4.5
MAX.
MBK187
BFQ68
3
V
mA
W
GHz
V
dBm
dBm
UNIT