BFQ68 NXP Semiconductors, BFQ68 Datasheet - Page 3

• Manufacturer Part Number: BFQ68
• Manufacturer: NXP Semiconductors

Specifications of BFQ68

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 300mA
• Dc Current Gain (min): 25
• Power Dissipation: 4.5W
• Frequency (max): 4GHz
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
September 1995
V
V
V
I
P
T
T
R
C
SYMBOL
stg
j
CBO
CEO
EBO
tot
th j-c
NPN 4 GHz wideband transistor
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to case
PARAMETER
PARAMETER
open emitter
open base
open collector
up to T
3
c
= 110 C
CONDITIONS
THERMAL RESISTANCE
65
MIN.
20 K/W
Product specification
25
18
2
300
4.5
150
200
MAX.
BFQ68
V
V
V
mA
W
C
C
UNIT