PSMN063-150D NXP Semiconductors, PSMN063-150D Datasheet - Page 8

• Manufacturer Part Number: PSMN063-150D
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN063-150D

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.063Ohm
• Drain-source On-volt: 150V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 29A
• Power Dissipation: 150W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN063-150D_4
Product data sheet
Fig 13. Input, output and reverse transfer capacitances
(pF)
P
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
−1
1
C
C
C
oss
rss
iss
10
V
DS
003aaa154
(V)
Rev. 04 — 17 December 2009
10
2
N-channel TrenchMOS SiliconMAX standard level FET
Fig 14. Source current as a function of source-drain
(A)
I
S
30
20
10
0
voltage; typical values
0
0.4
T
j
PSMN063-150D
= 175 °C
0.8
T
V
j
© NXP B.V. 2009. All rights reserved.
= 25 °C
SD
003aaa156
(V)
1.2
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