PSMN063-150D NXP Semiconductors, PSMN063-150D Datasheet - Page 9

• Manufacturer Part Number: PSMN063-150D
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN063-150D

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.063Ohm
• Drain-source On-volt: 150V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 29A
• Power Dissipation: 150W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
7. Package outline
Fig 15. Package outline SOT428 (DPAK)
PSMN063-150D_4
Product data sheet
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT428
2.38
2.22
L
A
2
b
1
0.93
0.46
A
1
1
e
0.89
0.71
b
IEC
b
e
E
2
1
2
1.1
0.9
b
b
1
5.46
5.00
b
2
3
JEDEC
TO-252
0.56
0.20
c
A
w
0
D
L
M
1
REFERENCES
A
6.22
5.98
Rev. 04 — 17 December 2009
D
H
1
D
min
D
4.0
mounting
base
2
L
JEITA
SC-63
1
N-channel TrenchMOS SiliconMAX standard level FET
scale
6.73
6.47
E
5
c
A
1
4.45
min
E
A
1
y
2.285
e
4.57
e
10 mm
1
10.4
H
9.6
D
PSMN063-150D
PROJECTION
EUROPEAN
2.95
2.55
L
E
1
min
0.5
L
1
© NXP B.V. 2009. All rights reserved.
0.9
0.5
L
2
ISSUE DATE
06-02-14
06-03-16
0.2
w
D
2
SOT428
max
0.2
y
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